NCE Power SGT MOSFET Distributor | 30 V to 60 V Line

Genuine NCE Power Shielded Gate Trench MOSFETs from 30 V to 60 V, from 1.4 mOhm, in DFN and TO packages for DC-DC and synchronous rectification.

Read the NCE Power SGT MOSFET Selection Guide

NCE Power SGT MOSFET Overview

BeiLuo supplies genuine NCE Power Shielded Gate Trench (SGT) MOSFETs, the low-voltage switches that NCE built its reputation on. The SGT structure shields the gate from the drain, which sharply reduces the gate charge and the on-resistance at the same time, so the device delivers an excellent gate-charge times on-resistance figure of merit for high-frequency switching and synchronous rectification. NCE Power offers the SGT family from about 30 V to 60 V and from a few amps to more than 200 A, in packages that range from the compact surface-mount DFN5x6 and DFN3x3 to the through-hole TO-220, TO-247 and TO-263, with on-resistance values as low as 1.4 milliohm in the high-current parts. A power MOSFET turns on with a simple voltage drive, so the gate circuit is far easier than a bipolar device, and the fast body diode allows the switch to freewheel cleanly in a bridge. That combination suits DC-DC converters, synchronous rectification, battery protection, chargers, motor drives and load switches, where efficiency and current density both matter. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you match the voltage class, on-resistance, package and gate charge to your converter. Selecting an SGT MOSFET means matching the voltage and current to your circuit, choosing an on-resistance that meets the loss and thermal budget, and confirming the package for your cooling and board.

NCE Power SGT MOSFET Product Range

In-stock SGT MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.

ModelVDSS (V)ID (A)RDS(on)@10V typ (mOhm)PackageTechnology
NCEP018N60T60 V210 A1.7TO-247Shielded Gate Trench
NCEP055N30GU30 V55 A4.2DFN5x6Shielded Gate Trench

Frequently Asked Questions

How do I read the NCE Power SGT MOSFET table?

Match VDSS to your bus voltage, use ID for continuous current and RDS(on) for conduction loss, and read the Package and Technology columns to confirm the mechanical fit and the process.

On-resistance rises with temperature, so check the hot value for cooling.

Open the NCEP018N60T detail page

What is an SGT MOSFET?

A Shielded Gate Trench MOSFET places a shield electrode below the gate, which reduces the gate charge while lowering on-resistance. The result is a better gate-charge FOM, so the device switches faster with less drive power, which suits synchronous rectification and DC-DC conversion.

It is the modern default for low-voltage power switching.

Compare NCE Power MOSFET families

How do I drive the gate?

A power MOSFET turns on with a gate voltage, so the drive is simple. Keep the gate loop short, choose the gate resistor for your EMI target, and provide enough drive current to charge the gate quickly without ringing.

Our FAE team can review your gate-drive design.

Ask about gate-drive design

How do I plan the thermal design?

Use the on-resistance hot value to estimate conduction loss, add switching loss, and verify the thermal path from junction to ambient. Do not size cooling from the 25 C figure.

Request a thermal review for your heatsink.

Request a thermal design review

Documentation

Need a quote or samples?

Request pricing, samples or technical consultation for NCE Power SGT MOSFET products. Our FAE team responds within one business day.

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